SUM202MN
P-Channel MOSFET +
PNP BJT
Integrated Power MOSFET
with
PNP Low VCE(sat) Switching
Transistor
DFN-8
This integrated device represents a new level of safety and
8
board−space reduction by combining the 20V P−Channel FET with a
PNP Silicon Low VCE(sat) switching
transistor.
This newly integrated
1
product provides higher efficiency and accuracy for battery powered portable electronics.
Features
• Low RDS(on) (MOSFET) and Low VCE(sat) (
Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package
BVDSS -20V
BVCEO
MOSFET
RDS(ON) Typ.
48mΩ
@ VGS=-4.
5V 65mΩ
@ VGS=-2.
5V
PNP BJT
BVEBO.
• This is a Halogen−Free Device
-12V
-5...