TOSHIBA MOS MEMORY PRODUCT 262,144 WORD X 1 BIT DYNAMIC RAM SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS TMM41257P/T-12 TMM41257P/T-15 DESCRIPTION The TMM41257P/T is the N-channel dynamic RAM organized 262,144 words by 1 bit.
Multiplexed address inputs permit the TMM41257P/T to be packaged in a standard 16 pin plastic DIP and 18 pin plastic leaded chip carrier.
The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
The double layered MOS technology with polycide and poly Si permits the TMM41257P/T high speed operation.
Also, the advanced circuit techniques have realized low power dissipation.
System oriented ...

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