FQA8N80C_F109 800V N-Channel MOSFET
FQA8N80C_F109
800V N-Channel MOSFET
Features
• 8.
4A, 800V, RDS(on) = 1.
55Ω @VGS = 10 V • Low gate charge ( typical 35 nC) • Low Crss ( typical 13pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant
November 2007
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switche...