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Part Number
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FQA11N90C_F109 |
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Manufacturer
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Fairchild Semiconductor |
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Description
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MOSFET |
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Published
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Jan 16, 2017 |
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Detailed Description
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FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900...
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Datasheet
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FQA11N90C_F109
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Overview
FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.
0 A, 1.
1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.
1 Ω (Max.
) @ VGS = 10 V, ID = 5.
5 A • Low Gate Charge (Typ.
60 nC) • Low Crss (Typ.
23 pF) • 100% Avalanche Tested • RoHS compliant
April 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC),...
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