S amHop Microelectronics C orp.
S DP /B 85N03L
May,2004 ver1.
1
N-Channel Logic Level E nhancement Mode Field E ffect
Transistor
4 P R ODUC T S UMMAR Y
F E AT UR E S
VDS S 30V
ID R DS (on) ( m W ) Max
5 @ VGS = 10V 83A
7.
5 @ VGS = 4.
5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS S DB S E R IE S T O -263(DD-P AK )
G D S
S DP S E R IE S TO-220
D
G S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
S ymbol VDS VGS
Limit 30 20
Drain C urrent-C ontinuous @ TJ=125 C -P ulsed a
ID IDM
83 249
Drain-S ource Diode Forward C urrent
...