Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.
1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA
o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA
o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA
THN6301 Series
SiGe
NPN Transistor
SOT-523
Unit in mm
□ hFE Classification
Marking AA1
AA2
hFE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO Collector to Emitter Breakdown Voltage
VEBO Emitter to Base Breakdown Voltage
Ic Collector Current (DC)
PT Total Power Dissipation TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : ...