Semiconductor
□ Applications
LNA and wide band amplifier up to GHz range
THN6201 Series
SiGe
NPN Transistor
SOT-523
Unit in mm
□ Features
o Low Noise Figure NF = 1.
1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.
5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA
o High Power Gain MAG = 18.
5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA
o High Transition Frequency fT = 12 GHz at VCE = 3 V, IC = 15 mA
□ hFE Classification
Marking AC1 hFE Value 125 to 300
AC2 80 to 160
□ Absolute Maximum Ratings
Symbol
Parameter
VCBO
Collector to Base Breakdown Voltage
VCEO
Collector to Emitter Breakdown Voltage
VEBO
Emitter to Base Breakdown Voltage
IC Collector Cu...