P0808ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 75V 8mΩ @VGS = 10V ID 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 89 63 250 Avalanche Current IAS 85 Avalanche Energy L = 0.
1mH EAS 362 Power Dissipation TC = 25 °C TC = 100 °C PD 160 80 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
2Limited by ...

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