P1510ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 15mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 64 45 200 Avalanche Current IAS 67 Avalanche Energy L = 0.
1 mH EAS 224 Power Dissipation TC= 25 °C TC= 100°C PD 150 75 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 175 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum ju...

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