JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
DFNWB3×2-8L-I Plastic-Encapsulate
Transistors-MOSFETS
CJZM718 N-ch MOSFET and
PNP Transistor
V(BR)DSS/BVCEO
20V -25V
RDS(on)MAX
0.
7Ω@4.
5V 0.
85Ω@2.
5V
/
ID/IC
0.
5A -3A
DFNWB3×2-8L-I
&
'
FEATURE High DC current gain Low Threshold Small package DFNWB3x2-8L-I Including a CJP718
transistor and a CJ1012
MOSFET independently in a package
MARKING:
APPLICATION Charging circuit Other power management in portable equipments
Equivalent Circuit
C C SG 8 765
front
back
1 2 34 C E BD
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO...