P1820BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 160mΩ @VGS = 10V ID 18A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 18 11.
4 30 Avalanche Current IAS 18 Avalanche Energy L = 1mH EAS 162 Power Dissipation TC= 25 °C TC= 100°C PD 104 41 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction tempe...

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