Part Number
|
P6503FMA |
Manufacturer
|
UNIKC |
Description
|
P-Channel MOSFET |
Published
|
Feb 2, 2017 |
Detailed Description
|
P6503FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
55mΩ @VGS = -10V
ID -3.1A
SOT-23...
|
Datasheet
|
P6503FMA
|
Overview
P6503FMA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
55mΩ @VGS = -10V
ID -3.
1A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-3.
1 -2.
4 -12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
0.
96 0.
62
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted...
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