Part Number
|
P5103EAG |
Manufacturer
|
UNIKC |
Description
|
P-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
P5103EAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID -5A
TSOP- 06...
|
Datasheet
|
P5103EAG
|
Overview
P5103EAG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
51mΩ @VGS = -10V
ID -5A
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage Drain-Gate Voltage (RGS=20KΩ)
VGS ±20 VDG -30
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-5 -4.
2 -20
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.
0 1.
4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t≦5sec
Junction-to-Ambient
Steady State
Junction-to-Lead
Steady Sta...
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