Part Number
|
P5803NAG |
Manufacturer
|
UNIKC |
Description
|
N&P-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
P5803NAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
-30V
115mΩ @VGS ...
|
Datasheet
|
P5803NAG
|
Overview
P5803NAG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
-30V
115mΩ @VGS = -10V
ID Channel 3A N -2A P
TSOP- 06
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
N3 P -2 ID N 2.
3 P -1.
6
Pulsed Drain Current1
N 30 IDM P -10
Power Dissipation
TA = 25 °C TA = 70 °C
N 0.
8 P 0.
8 PD N 0.
5 P 0.
5
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RqJA
1Pulse widt...
Similar Datasheet