Part Number
|
P4006BV |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.3A
SOP-8
ABSO...
|
Datasheet
|
P4006BV
|
Overview
P4006BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ @VGS = 10V
ID 4.
3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
4.
3 3.
4 20
Avalanche Current
IAS 18
Avalanche Energy
L = 0.
1mH
EAS
16.
2
Power Dissipation
TA= 25 °C TA =70 °C
PD
1.
6 1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
76
Junction-to-Case
RqJC
3...
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