Part Number
|
PV555BA |
Manufacturer
|
UNIKC |
Description
|
P-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
PV555BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
28mΩ @VGS = -10V
ID -6A
SOP- 08
...
|
Datasheet
|
PV555BA
|
Overview
PV555BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
28mΩ @VGS = -10V
ID -6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-6 -4.
7 -24
Avalanche Current
IAS -19.
3
Avalanche Energy
L=0.
1mH
EAS
18.
6
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.
7 1.
1
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
72
1Pulse width l...
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