PV601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 28mΩ @VGS = -10V ID 7A -6.
4A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH.
LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N7 P -6.
4 ID N 5.
6 P -5.
1 Pulsed Drain Current1 N 25 IDM P -23 Avalanche Current N 12 IAS P -19.
9 Avalanche Energy L = 0.
1mH N 7.
2 EAS P 19.
8 Power Dissipation3 TA = 25 °C TA = 70 °C N 2 P PD N 1.
3 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.
2 1 2015/11/...

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