Part Number
|
P6803HVG |
Manufacturer
|
UNIKC |
Description
|
Dual N-Channel MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
P6803HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
ID 4.5A
SOP-8...
|
Datasheet
|
P6803HVG
|
Overview
P6803HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
ID 4.
5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID IDM
4.
5 3.
6 20
Power Dissipation
TA = 25 °C TA= 70°C
PD
2 1.
3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 62.
5 °C / W
REV 1.
0
1 2014/10/17
P6803HVG
Dual N-Channel Enhancement Mode MOSFET
ELECTRI...
Similar Datasheet