PF610HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.
7Ω @VGS = 10V ID 1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 1 0.
8 4 Avalanche Current IAS 3.
9 Avalanche Energy L = 1mH EAS 7.
6 Power Dissipation TA = 25 °C TA= 70°C PD 1.
6 1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
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