Part Number
|
PB600BA |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 3, 2017 |
Detailed Description
|
PB600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 9A
PDFN 2X2S
AB...
|
Datasheet
|
PB600BA
|
Overview
PB600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 9A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TA = 25 °C TA= 70 °C
ID IDM
9 7.
2 27
Avalanche Current
IAS 12.
6
Avalanche Energy
L = 0.
1 mH
EAS
7.
9
Power Dissipation
TA= 25 °C TA= 70°C
PD
1.
7 1.
1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited b...
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