P0603BEAD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5.
8mΩ @VGS = 10V ID 56A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 56 Continuous Drain Current1,2 TC = 100 °C TA = 25 °C ID 35 14.
5 Pulsed Drain Current1 TA = 70 °C IDM 11.
6 100 Avalanche Current IAS 38 Avalanche Energy L = 0.
1mH EAS 72 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12 2.
1 TA = 70 °C 1.
3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV 1.
0 1 2014/6/18 P0603BEAD N-Chan...

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