Part Number
|
PE526BA |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 4, 2017 |
Detailed Description
|
PE526BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4mΩ @VGS = 10V
ID3 49A
PDFN 3X3P
A...
|
Datasheet
|
PE526BA
|
Overview
PE526BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4mΩ @VGS = 10V
ID3 49A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
49
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
31 17
Pulsed Drain Current1
TA= 70 °C
IDM
14 50
Avalanche Current
IAS 47
Avalanche Energy
L =0.
1mH
EAS
110
TC = 25 °C
16
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6 2
TA = 70 °C
1.
3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SY...
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