PE614DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 12.
5mΩ @VGS = 4.
5V ID 30A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±10 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation TC= 25 °C TC = 100 °C TA = 25 °C TA= 70 °C L = 0.
1mH TC= 25 °C TC = 100 °C TA = 25 °C TA= 70°C ID IDM IAS EAS PD 30 19 11 9 80 22 24 17.
8 7 2.
5 1.
6 ESD Class HBM 2kV Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Ju...

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