Part Number
|
PE6B0SA |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 4, 2017 |
Detailed Description
|
PE6B0SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ @VGS = 10V
ID 42A
PDFN 3X3P
AB...
|
Datasheet
|
PE6B0SA
|
Overview
PE6B0SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ @VGS = 10V
ID 42A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
42
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
26 16
Pulsed Drain Current1
TA= 70 °C
IDM
13 80
Avalanche Current
IAS 25
Avalanche Energy
L =0.
1mH
EAS
31
TC = 25 °C
17.
8
Power Dissipation4
TC = 100 °C TA = 25 °C
PD
7 2.
7
TA = 70 °C
1.
7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
...
Similar Datasheet