Part Number
|
PA210HK |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 4, 2017 |
Detailed Description
|
PA210HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 8.7A
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|
Datasheet
|
PA210HK
|
Overview
PA210HK
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 8.
7A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
8.
7 ID 5.
5 IDM 25
Continuous Drain Current
TA = 25 °C TA = 70 °C
2.
8 ID 2.
2
Avalanche Current
IAS 8.
7
Avalanche Energy
L = 1mH
EAS 37.
8
Power Dissipation
TC = 25 °C TC = 100 °C
20 PD 8
Power Dissipation
TA = 25 °C TA = 70 °C
2.
1 PD 1.
3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ...
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