PK616BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7mΩ @VGS = 10V ID 50A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 50 31.
5 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 13 10.
5 Avalanche Current IAS 24 Avalanche Energy L =0.
1mH EAS 28.
5 Power Dissipation TC = 25 °C TC = 100 °C PD 31 12.
5 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
2 1.
4 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ ...

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