PK626HY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.
4mΩ @VGS = 10V 30V 7mΩ @VGS = 10V ID CH.
99A Q2 43A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH.
LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 99 43 63 27 Pulsed Drain Current1 Q2 IDM Q1 120 55 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 25 11 20 9.
5 Avalanche Current Q2 IAS Q1 48 23 Avalanche Energy L = 0.
1mH Q2 EAS Q1 115 26.
4 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 43 2...

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