PK650DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 2.
8mΩ @VGS = 10V 30V 11mΩ @VGS = 10V ID CH.
83A Q2 36A Q1 PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH.
LIMITS Drain-Source Voltage Q2 VDS Q1 30 30 Gate-Source Voltage Q2 VGS Q1 ±20 ±20 Continuous Drain Current3 TC = 25 °C TC = 100 °C Q2 Q1 ID Q2 Q1 83 36 52 23 Pulsed Drain Current1 Q2 IDM Q1 130 55 Continuous Drain Current TA = 25 °C TA = 70 °C Q2 Q1 ID Q2 Q1 21 10 17 8 Avalanche Current Q2 IAS Q1 52 21 Avalanche Energy L = 0.
1mH Q2 EAS Q1 135 22 Power Dissipation TC = 25 °C TC = 100 °C Q2 Q1 PD Q2 Q1 36 28 1...

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