PK664BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 2.
4mΩ @VGS = 10V ID 114A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 114 72 250 Continuous Drain Current TA = 25 °C TA= 70 °C ID 23 18 Avalanche Current IAS 48 Avalanche Energy L =0.
1mH EAS 115 Power Dissipation TC = 25 °C TC = 100 °C PD 59 23 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
4 1.
5 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W W ...

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