Part Number
|
PA210BL |
Manufacturer
|
UNIKC |
Description
|
MOSFET |
Published
|
Feb 6, 2017 |
Detailed Description
|
PA210BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 3A
SOT- 223
...
|
Datasheet
|
PA210BL
|
Overview
PA210BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID 3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1,2
TA = 25 °C TA = 70 °C
ID IDM
3 1.
9 25
Avalanche Current
IAS 25
Avalanche Energy
L = 0.
1mH
EAS
33
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 0.
8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMB...
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