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Part Number
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P0903BDG |
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Manufacturer
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UNIKC |
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Description
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MOSFET |
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Published
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Feb 6, 2017 |
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Detailed Description
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P0903BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.5mΩ @VGS = 10V
ID 56A
TO-252
AB...
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Datasheet
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P0903BDG
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Overview
P0903BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 9.
5mΩ @VGS = 10V
ID 56A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
56 35 160
Avalanche Current
IAS 34
Avalanche Energy
L=0.
1mH
EAS
60
Power Dissipation
TC= 25 °C TC= 100°C
PD
49 20
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.
)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambie...
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