PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM WTR (Wide Temperature Range) EDD12322GBH-TS (4M words × 32 bits) Specifications • Density: 128M bits • Organization  × 32 bits: 1M words × 32 bits × 4 banks • Package: 90-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.
7V to 1.
95V • Data rate: 333Mbps/266Mbps (max.
) • 1KB page size  Row address: A0 to A11  Column address: A0 to A7 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 2, 4, 8, 16 • Burst type (BT):  Sequential (2, 4, 8, 16)  Interleave (2, 4, 8, 16) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst access • Driver strength: n...

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