Part Number
|
P3504BD |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 6, 2017 |
Detailed Description
|
P3504BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 40mΩ @VGS = 10V
ID 20A
TO-252
100%...
|
Datasheet
|
P3504BD
|
Overview
P3504BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 40mΩ @VGS = 10V
ID 20A
TO-252
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
100% UIS tested
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
VDS 40 V VGS ±20 V
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current Avalanche Energy
TC = 25 °C TC = 70 °C
L = 0.
1mH
ID
IDM IAS EAS
20 16
A 60 20 20 mJ
Power Dissipation
TC = 25 °C TC = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
30 20 -55 to 150
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width ...
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