P5002CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 50mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 20 13 60 Avalanche Current IAS 6.
8 Avalanche Energy L=0.
1mH EAS 2.
3 Power Dissipation TC= 25 °C TC= 100°C PD 35 14 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC...

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