Part Number
|
PA102FDG |
Manufacturer
|
UNIKC |
Description
|
P-Channel MOSFET |
Published
|
Feb 7, 2017 |
Detailed Description
|
PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID -10A
TO-25...
|
Datasheet
|
PA102FDG
|
Overview
PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.
5V
ID -10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-10 -6.
2 -24
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 9.
6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle ≤1%
SYMBOL RqJC RqJA
TYP...
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