Part Number
|
P5506BDG |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 7, 2017 |
Detailed Description
|
P5506BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS = 10V
ID 22A
TO-252
ABS...
|
Datasheet
|
P5506BDG
|
Overview
P5506BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS = 10V
ID 22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
22 18 80
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 32
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperatu...
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