P0306BT

P0306BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 3.4mΩ @VGS = 10V ID 162A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2,3 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 162 102 300 Avalanch...