Part Number
|
P0610BT |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 7, 2017 |
Detailed Description
|
P0610BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ @VGS = 10V
ID2 120A
TO-220
...
|
Datasheet
|
P0610BT
|
Overview
P0610BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.
5mΩ @VGS = 10V
ID2 120A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
120 76 375
Avalanche Current
IAS 39
Avalanche Energy
L = 1mH
EAS 770
Power Dissipation
TC = 25 °C TC = 100 °C
PD
208 83
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maxim...
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