Part Number
|
P106AAT |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 7, 2017 |
Detailed Description
|
P106AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
65V 10mΩ @VGS = 10V
ID 74A
TO-220
ABSO...
|
Datasheet
|
P106AAT
|
Overview
P106AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
65V 10mΩ @VGS = 10V
ID 74A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 65
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1,2
TC = 25 °C TC = 100 °C
ID IDM
74 38 180
Avalanche Current
IAS 65
Avalanche Energy
L = 0.
1mH
EAS
215
Power Dissipation
TC = 25 °C TC = 100 °C
PD
104 46
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Limite...
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