JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-363 Plastic-Encapsulate MOSFETS
UM6K1N Dual N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.
5V
ID
100mA
SOT-363
FEATURE 1) Two 2SK3018
transistors in a package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.
5V drive) makes this device ideal for portable equipment.
MARKING
Equivalent Circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
VDS Drain-Source Voltage
VGS Gate-Source Voltage
30 ±20
ID Continuous Drain Current
0.
1
PD Power Dissipation
0.
15
RθJA TJ
...