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Part Number
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P046BTFS |
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Manufacturer
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UNIKC |
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Description
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N-Channel MOSFET |
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Published
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Feb 9, 2017 |
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Detailed Description
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P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.6Ω @VGS = 10V
ID 4A
...
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Datasheet
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P046BTFS
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Overview
P0460BTF / P046BTFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
2.
6Ω @VGS = 10V
ID 4A
TO-220F TO-220FS
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
4 1.
5 16
Avalanche Current
IAS 4
Avalanche Energy
L = 10mH
EAS
81
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambie...
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