Part Number
|
P0806ATF |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 9, 2017 |
Detailed Description
|
P0806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID 57A
TO-220F
A...
|
Datasheet
|
P0806ATF
|
Overview
P0806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.
5mΩ @VGS = 10V
ID 57A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±25
Continuous Drain Current
TC = 25 °C TC = 100 °C
ID
57 36
Pulsed Drain Current
IDM 220
Avalanche Current
IAS 64
Avalanche Energy
L = 0.
1mH
EAS
202
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL...
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