Part Number
|
P1120ETFB |
Manufacturer
|
UNIKC |
Description
|
N-Channel MOSFET |
Published
|
Feb 9, 2017 |
Detailed Description
|
P1120ETFB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
280mΩ @VGS = 10V
ID 11A
TO-220F...
|
Datasheet
|
P1120ETFB
|
Overview
P1120ETFB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
280mΩ @VGS = 10V
ID 11A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 200
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
11 6.
3 33
Avalanche Current
IAS 13
Avalanche Energy
L = 1mH
EAS 84.
5
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12.
5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum juncti...
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