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Part Number
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P2610BTF |
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Manufacturer
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UNIKC |
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Description
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N-Channel MOSFET |
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Published
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Feb 9, 2017 |
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Detailed Description
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P2610BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ @VGS = 10V
ID 24A
TO-220F...
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Datasheet
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P2610BTF
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Overview
P2610BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.
8mΩ @VGS = 10V
ID 24A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
24 15 70
Avalanche Current
IAS 11.
7
Avalanche Energy
L = 0.
1mH
EAS
6.
9
Power Dissipation
TC = 25 °C TC = 100 °C
PD
37.
9 15
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum jun...
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