PZ558EZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3Ω @VGS = 4V ID 0.
2A SOT-363 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±16 Continuous Drain Current1 Pulsed Drain Current2 TA = 25 °C TA = 70 °C ID IDM 0.
24 0.
17 0.
7 Power Dissipation TA = 25 °C TA = 70 °C PD 0.
29 0.
19 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Limited by maximum junction temperature.
2Limited by package.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 413 °C / W REV 1.
0 1 2015/8/17 PZ55...

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