Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at 150 °C - RDS(on) max of 0.
055 Ω - Voltage Controlled - Low Gate Charge - Low Intrinsic Capacitance Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive TO-220 Silicon Carbide SJDA065R055 Product Summary BVDS RDS(on)max 650 0.
055 V Ω D(2,4) G(1) S(3) Internal Schematic MAXIMUM RATINGS Parameter Symbol Conditions Continuous Drain Current Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source Voltage ID, TC=25 ID, TC=100 IDM tSC PD VGS...

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