Part Number
|
SJDP120R085 |
Manufacturer
|
SemiSouth |
Description
|
Normally-On Trench Silicon Carbide Power JFET |
Published
|
Feb 10, 2017 |
Detailed Description
|
Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficien...
|
Datasheet
|
SJDP120R085
|
Overview
Silicon Carbide
SJDP120R085
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 °C
- RDS(on) typical of 0.
075 Ω
- Voltage Controlled
- Low Gate Charge - Low Intrinsic Capacitance
4
Product Summary
BVDS RDS(ON)max
ETS,typ
1200 0.
085 290
V Ω µJ
D(2,4)
G(1)
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-247
3 2 1
S(3) Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
Pulsed Drain Current (1) Short Circuit Withstand Time Power Dissipation Gate-Source Voltage
...
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