Part Number
|
SJEP120R063 |
Manufacturer
|
SemiSouth |
Description
|
Normally-OFF Trench Silicon Carbide Power JFET |
Published
|
Feb 10, 2017 |
Detailed Description
|
PRELIMINARY
Silicon Carbide
SJEP120R063
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with S...
|
Datasheet
|
SJEP120R063
|
Overview
PRELIMINARY
Silicon Carbide
SJEP120R063
Normally-OFF Trench Silicon Carbide Power JFET
Features:
- Compatible with Standard Gate Driver ICs
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 150 °C Maximum Operating Temperature
- RDS(on)max of 0.
063 Ω - Voltage Controlled - Low Gate Charge
4
- Low Intrinsic Capacitance
Product Summary
BVDS
1200
V
RDS(ON)max
0.
063
Ω
ETS,typ
440
µJ
D(2,4)
G(1)
Applications: - Solar Inverter - SMPS - Power Factor Correction - Induction Heating - UPS - Motor Drive
TO-247
3 2 1
S(3) Internal Schematic
MAXIMUM RATINGS
Parameter
Symbol
Conditions
Continuous Drain Current
ID, Tj=1...
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