Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.
3.
00 Jul 20, 2016 Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 123 1.
Gate 2.
Collector G 3.
Emitter 4.
Collector E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse vol...

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