Part Number
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TC58DVM92A5TAI0 |
Manufacturer
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Toshiba |
Description
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512M-BIT (64M x 8 BITS) CMOS NAND E2PROM |
Published
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Feb 15, 2017 |
Detailed Description
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TC58DVM92A5TAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRI...
|
Datasheet
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TC58DVM92A5TAI0
|
Overview
TC58DVM92A5TAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
512-MBIT (64M × 8 BITS) CMOS NAND E2PROM
DESCRIPTION
The device is a single 3.
3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).
The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for ...
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